?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier tm april 2006 2N5551- mmbt5551 npn general purpose amplifier features ? this device is designed for general purpose high volt age amplifiers and gas discharge display drivers. ? suffix ?-c? means center collector in 2N5551 (1. emitter 2. collector 3. base) ? suffix ?-y? means h fe 180~240 in 2N5551 ( test condition : i c = 10ma, v ce = 5.0v ) absolute maximum ratings * t a = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations . thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6" 1.6" 0.06." symbol parameter value units v ceo collector-emitter voltage 160 v v cbo collector-base voltage 180 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 600 ma t j , t stg junction and storage temperature -55 ~ +150 c symbol parameter max units 2N5551 *mmbt5551 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r ja thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w 1. base 2. emitter 3. collector sot-23 1 2 3 marking: 3s 2N5551 mmbt5551 to-92
2 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier electrical characteristics t a = 25c unless otherwise noted spice model npn (is=2.511f xti=3 eg=1.11 vaf=100 bf=242.6 ne=1.249 ise=2.511f ikf=.3458 xtb=1.5 br=3.197 nc=2 isc=0 ikr=0 rc=1 cjc=4.883p mjc=.3047 vjc=.75 fc=.5 cje=18.79p mje=.3416 vje=.75 tr=1.202n tf=560p itf=50m vtf=5 xtf=8 rb=10) symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = 1.0ma, i b = 0 160 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 180 v v (br)ebo emitter-base breakdown voltage i e = 10ua, i c = 0 6.0 v i cbo collector cutoff current v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c 50 50 na a i ebo emitter cutoff current v eb = 4.0v, i c = 0 50 na on characteristics h fe dc current gain i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v 80 80 30 250 v ce (sat) collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.15 0.20 v v v be (sat) base-emitter on voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 1.0 1.0 v v small signal characteristics f t current gain bandwidth product i c = 10ma, v ce = 10v, f = 100mhz 100 300 mhz c obo output capacitance v cb = 10v, i e = 0, f = 1.0mhz 6.0 pf c ibo input capacitance v be = 0.5v, i c = 0, f = 1.0mhz 20 pf h fe small-signal current gain i c = 1.0 ma, v ce = 10 v, f = 1.0khz 50 250 nf noise figure i c = 250 ua, v ce = 5.0 v, r s =1.0 k ? , f=10 hz to 15.7 khz 8.0 db
3 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier typical performance characteristics figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current figure 3. base-emitter saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collec tor cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse voltage 0.1 1 10 100 0 50 100 150 200 250 50 20 5 2 0.5 0.2 -40 o c 25 o c 125 o c v ce = 5v h fe - typical pulsed current gain i c - collector current (ma) 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 - 40 o c 25 o c 125 o c = 10 v cesat - collector emitter voltage (v) i c - collector current (ma) 110100 0.0 0.2 0.4 0.6 0.8 1.0 200 125 o c 25 o c - 40 o c = 10 v besat - base emitter voltage (v) i c - collector current (ma) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 - 40 o c 25 o c 125 o c v ce = 5v v beon - base emitter on voltage (v) i c - collector current (ma) 25 50 75 100 12 5 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb 0.1 1 10 100 0 5 10 15 20 25 30 v - collector voltage (v) capacitance (pf) c f = 1.0 mhz ce c cb ib
4 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier typical performance characteristics (continued) figure 7. collector- emitter breakdown voltage with resistance between emitter-base figure 8. small signal current gain vs collector current figure 9. power dissipation vs ambient temperature between emitter-base 0.1 1 10 100 1000 160 180 200 220 240 260 resistance (k ) bv - breakdown voltage (v) ? cer i = 1.0 ma c vs collector current 11050 0 4 8 12 16 i - collector current (ma) h - small signal current gain c fe freg = 20 mhz v = 10v ce 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 2N5551- mmbt5551 npn ge neral purpose amplifier disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not ex- pand the terms of fairchild?s worldwide terms a nd conditions specifically the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any co mponent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications ma y change in any manner with- out notice. preliminary first production this datasheet c ontains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specific ations. fairchild semi- conductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contai ns specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i19 5 www.fairchildsemi.com 2N5551- mmbt5551 rev. b
|
